Augsburg Diamond Technology synthesizes single-crystal diamond by chemical vapor deposition on a foreign substrate (heteroepitaxy).
The widespread concept of homoepitaxy requires single crystal diamonds of appropriate size as seeds. In contrast, our new
method applies the multilayer system Ir/YSZ/Si as a scalable substrate. The layer system, its preparation as well as
the procedures for oriented diamond growth were developed and patented by the founders during their work in the group of
Dr. Matthias Schreck at the University of Augsburg.
Ir/YSZ/Si wafers with a diameter of up to 100 mm are applied to synthesize diamond crystals with areas of cm2
These single crystals are homogeneous and free from macroscopic interfaces.
Augsburg Diamond Technology executes each deposition process of the different layers under its own direction. In order to ensure
reproducibility of the individual steps of the production process and to guarantee the quality of the crystals, various analytical
methods e.g. X-ray diffraction, Raman spectroscopy, or microscopy are routinely applied.