Heteroepitaxy of diamond on Ir/YSZ/Si

Augsburg Diamond Technology GmbH synthesizes single-crystal diamond by chemical vapor deposition on a foreign substrate (heteroepitaxy). In contrast to the widespread concept of homoepitaxy, which requires single crystal diamonds of appropriate size as seeds, our new method applies the multilayer system Ir/YSZ/Si as a scalable substrate. This innovation facilitates for the first time the synthesis of single crystal diamond on discs with a diameter up to 100 mm.


Substrate for heteroepitaxial diamond synthesis with a diameter of 100 mm: iridium/yttria stabilized zirconia/silicon

Diamond wafer

Freestanding single crystal diamond disc with a diameter of 92 mm and a weight of 155 ct